Open AccessErratum: “Kinase detection with gallium nitride based high electron mobility transistors” [Appl. Phys. Lett. 103, 013701 (2013)]
Author(s) -
Matthew S. Makowski,
Isaac Bryan,
Zlatko Sitar,
Consuelo Arellano,
Jinqiao Xie,
Ramón Collazo,
Albena Ivanisevic
Publication year - 2013
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4819200
Subject(s) - gallium nitride , transistor , optoelectronics , wide bandgap semiconductor , materials science , high electron mobility transistor , electron mobility , nitride , gallium , condensed matter physics , nanotechnology , physics , quantum mechanics , voltage , metallurgy , layer (electronics)
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