Non-linear piezoelectricity in zinc blende GaAs and InAs semiconductors | Zendy

Geoffrey Tse | Zendy; Joydeep Pal | Zendy; Umberto Monteverde | Zendy; Raghav Garg | Zendy; V. Haxha | Zendy; M. A. Migliorato | Zendy; Stanko Tomić | Zendy

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Non-linear piezoelectricity in zinc blende GaAs and InAs semiconductors

Author(s) -

Geoffrey Tse,

Joydeep Pal,

Umberto Monteverde,

Raghav Garg,

V. Haxha,

M. A. Migliorato,

Stanko Tomić

Publication year - 2013

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.4818798

Subject(s) - piezoelectricity , condensed matter physics , materials science , dipole , piezoelectric coefficient , ab initio quantum chemistry methods , ab initio , physics , quantum mechanics , composite material , molecule

We investigate the strain dependence of piezoelectric effect, both linear and non linear, in zincblende GaAs and InAs semiconductors. We expanded the polarization in terms of the ionic and dipole charges, internal displacement and the exploited the ab-initio Density Functional Theory (DFT) to evaluate the dependence of all quantities on the strain tensor. By this detailed study of the non linear piezoelectric effect, we report that even third order effects are significant.

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