Terahertz generation by GaAs nanowires | Zendy

V. N. Trukhin | Zendy; Anton S. Buyskikh | Zendy; N. A. Kaliteevskaya | Zendy; A. D. Bourauleuv | Zendy; L. L. Samoilov | Zendy; Yu. B. Samsonenko | Zendy; G. É. Cirlin | Zendy; M. A. Kaliteevski | Zendy; Andrew J. Gallant | Zendy

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Terahertz generation by GaAs nanowires

Author(s) -

V. N. Trukhin,

Anton S. Buyskikh,

N. A. Kaliteevskaya,

A. D. Bourauleuv,

L. L. Samoilov,

Yu. B. Samsonenko,

G. É. Cirlin,

M. A. Kaliteevski,

Andrew J. Gallant

Publication year - 2013

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4818719

Subject(s) - terahertz radiation , nanowire , optoelectronics , materials science , charge carrier , substrate (aquarium) , epitaxy , excited state , doping , carrier lifetime , diffusion , semiconductor , gallium arsenide , drift velocity , nanotechnology , electric field , physics , atomic physics , silicon , oceanography , layer (electronics) , thermodynamics , geology , quantum mechanics

We report on the emission of terahertz (THz) radiation from p-doped and intentionally undoped GaAs nanowires (NWs). The THz emission has been associated with the contributions of the drift and diffusion currents, excited in the 1D NWs. Taking into account the filling factor, the THz power emission for the NWs is shown to be 40 times more than that of the bulk epitaxial GaAs substrate. By analyzing the non-equilibrium dynamics of the photoinduced carriers in the nanowires, the charge carrier lifetime is shown to be of the order of 3 ns and the drift velocity 105 m/s

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