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We demonstrate amber-green emission from Al[subscript x]In[subscript 1– x]P light-emitting diodes (LEDs) with luminescence peaked at 566 nm and 600 nm. The LEDs are metamorphically grown on GaAs substrates via a graded In[subscript y]Ga[subscript 1– y]As buffer layer and feature electron confinement based on the control of Al[subscript x]In[subscript 1– x]P CuPt atomic ordering. A control sample fabricated without order-disorder carrier confinement is used to illustrate device improvement up to a factor of 3 in light output due to confinement at drive currents of 40 A/cm[superscript 2]. The light output at room temperature from our Al[subscript x]In[subscript 1– x]P LED structure emitting at 600 nm is 39% as bright as a Ga[subscript x]In[subscript 1– x]P LED emitting at 650 nm.United States. Dept. of Energy (National Energy Technology Laboratory (U.S.) DE-FC26-0#NT20286)United States. Dept. of Energy. Office of Basic Energy Sciences (DE-AC36-08GO28308)National Science Foundation (U.S.) (Award DMR-08-19762

Amber-green light-emitting diodes using order-disorder AlxIn1−xP heterostructures