Open AccessImproved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with HfTiON as gate dielectric and TaON as passivation interlayer
Author(s) -
Lishi Wang,
Jing-Ping Xu,
Shuyan Zhu,
Yuan Huang,
P. T. Lai
Publication year - 2013
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4818000
Subject(s) - passivation , materials science , dielectric , capacitor , optoelectronics , capacitance , oxide , semiconductor , gate dielectric , high κ dielectric , metal , layer (electronics) , nanotechnology , electrode , electrical engineering , voltage , metallurgy , chemistry , engineering , transistor
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