Influence of thermal growth parameters on the SiO2/4H-SiC interfacial region | Zendy

Eduardo Pitthan | Zendy; Otávio Do Canto | Zendy; Rodrigo Palmieri | Zendy; Silma Alberton Corrêa | Zendy; G. V. Soares | Zendy; H. Boudinov | Zendy; F. C. Stedile | Zendy

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Influence of thermal growth parameters on the SiO2/4H-SiC interfacial region

Author(s) -

Eduardo Pitthan,

Otávio Do Canto,

Rodrigo Palmieri,

Silma Alberton Corrêa,

G. V. Soares,

H. Boudinov,

F. C. Stedile

Publication year - 2013

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.4817896

Subject(s) - materials science , degradation (telecommunications) , thermal oxidation , oxygen , thermal , composite material , silicon carbide , electronic engineering , thermodynamics , layer (electronics) , chemistry , physics , organic chemistry , engineering

In order to elucidate the origin of SiC electrical degradation from thermal oxidation, 4H-SiC substrates were thermally oxidized under different conditions of time and pressure. Results from nuclear reaction analyses were correlated to those from electrical measurements. Although the increase in the flatband voltage shift and in the film thickness were related to the oxidation parameters, the results exclude the thickness of the SiO2/4H-SiC interfacial region and the amount of residual oxygen compounds present on the SiC surface as the main cause of the electrical degradation from the SiC oxidation

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