Open AccessOn the efficiency droop of top-down etched InGaN/GaN nanorod light emitting diodes under optical pumping
Author(s) -
Shaofei Zhang,
Yukun Li,
Saeed Fathololoumi,
Hieu Pham Trung Nguyen,
Qi Wang,
Zetian Mi,
Qiming Li,
George T. Wang
Publication year - 2013
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4817834
Subject(s) - voltage droop , light emitting diode , optoelectronics , materials science , nanorod , diode , photoluminescence , spontaneous emission , wide bandgap semiconductor , gallium nitride , quantum efficiency , laser , optics , nanotechnology , physics , layer (electronics) , voltage divider , quantum mechanics , voltage
The optical performance of top-down etched InGaN/GaN nanorod light emitting diodes (LEDs) was studied using temperature variable photoluminescence spectroscopy with a 405 nm pump laser. Efficiency droop is measured from such nanorod structures, which is further enhanced with decreasing temperature. Through detailed rate equation analysis of the temperature-dependent carrier distribution and modeling of the quantum efficiency, this unique phenomenon can be largely explained by the interplay and dynamics between carrier radiative recombination in localized states and nonradiative recombination via surface states/defects