Temperature dependence of the electrical resistivity of LaxLu1-xAs | Zendy

Somayyeh Rahimi | Zendy; E. M. Krivoy | Zendy; Jehee Lee | Zendy; M. E. Michael | Zendy; Seth R. Bank | Zendy; Deji Akinwande | Zendy

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Temperature dependence of the electrical resistivity of LaxLu1-xAs

Author(s) -

Somayyeh Rahimi,

E. M. Krivoy,

Jehee Lee,

M. E. Michael,

Seth R. Bank,

Deji Akinwande

Publication year - 2013

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4817830

Subject(s) - electrical resistivity and conductivity , scattering , condensed matter physics , impurity , materials science , carrier scattering , chemistry , optics , physics , quantum mechanics , organic chemistry

We investigate the temperature-dependent resistivity of single-crystalline films of LaxLu1-xAs over the 5–300 K range. The resistivity was separated into lattice, carrier and impurity scattering regions. The effect of impurity scattering is significant below 20 K, while carrier scattering dominates at 20–80 K and lattice scattering dominates above 80 K. All scattering regions show strong dependence on the La content of the films. While the resistivity of 600 nm LuAs films agree well with the reported bulk resistivity values, 3 nm films possessed significantly higher resistivity, suggesting that interfacial roughness significantly impacts the scattering of carriers at the nanoscale limit

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