Increased negatively charged nitrogen-vacancy centers in fluorinated diamond | Zendy

Shanying Cui | Zendy; Evelyn L. Hu | Zendy

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Increased negatively charged nitrogen-vacancy centers in fluorinated diamond

Author(s) -

Shanying Cui,

Evelyn L. Hu

Publication year - 2013

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4817651

Subject(s) - diamond , vacancy defect , fluorine , photoluminescence , x ray photoelectron spectroscopy , spectroscopy , nitrogen , population , photoemission spectroscopy , chemistry , materials science , chemical physics , atomic physics , optoelectronics , physics , nuclear magnetic resonance , crystallography , demography , organic chemistry , quantum mechanics , sociology

We investigated the effect of fluorine-terminated diamond surface on the charged state of shallow nitrogen vacancy defect centers (NVs). Fluorination is achieved with CF4 plasma, and the surface chemistry is confirmed with x-ray photoemission spectroscopy. Photoluminescence of these ensemble NVs reveals that fluorine-treated surfaces lead to a higher and more stable negatively charged nitrogen vacancy (NV−) population than oxygen-terminated surfaces. NV− population is estimated by the ratio of negative to neutral charged NV zero-phonon lines. Surface chemistry control of NV− density is an important step towards improving the optical and spin properties of NVs for quantum information processing and magnetic sensing.

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