Open AccessInterface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy
Author(s) -
Olof Persson,
Erik Lind,
Edvin Lundgren,
Juan RubioZuazo,
G.R. Castro,
LarsErik Wernersson,
Anders Mikkelsen,
Rainer Timm
Publication year - 2013
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4817575
Subject(s) - materials science , x ray photoelectron spectroscopy , photoemission spectroscopy , dielectric , spectroscopy , layer (electronics) , metal , gate dielectric , optoelectronics , thin film , semiconductor , heterojunction , metal gate , analytical chemistry (journal) , nanotechnology , chemistry , gate oxide , transistor , chemical engineering , electrical engineering , physics , quantum mechanics , voltage , chromatography , engineering , metallurgy
MOS devices based on III-V semiconductors and thin high-k dielectric layers offer possibilities for improved transport properties. Here, we have studied the interface structure and chemical composition of realistic MOS gate stacks, consisting of a W or Pd metal film and a 6- or 12-nm-thick HfO2 layer deposited on InAs, with Hard X-ray Photoemission Spectroscopy. In and As signals from InAs buried more than 18 nm below the surface are clearly detected. The HfO2 layers are found to be homogeneous, and no influence of the top metal on the sharp InAs-HfO2 interface is observed. These results bridge the gap between conventional photoemission spectroscopy studies on various metal-free model samples with very thin dielectric layers and realistic MOS gate stacks
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