Open AccessOptical absorption in silicon layers in the presence of charge inversion/accumulation or ion implantation
Author(s) -
L. Alloatti,
M. Lauermann,
C. Sürgers,
C. Koos,
W. Freude,
J. Leuthold
Publication year - 2013
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4817255
Subject(s) - silicon , materials science , ion implantation , sheet resistance , optoelectronics , ion , electron , absorption (acoustics) , spreading resistance profiling , charge carrier , layer (electronics) , chemistry , nanotechnology , composite material , organic chemistry , physics , quantum mechanics
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