Erratum: “Hot electron injection effect on the microwave performance of type-I/II AlInP/GaAsSb/InP double-heterojunction bipolar transistors” [Appl. Phys. Lett. 98, 242103 (2011)]
Author(s) -
K. Y. Cheng,
Chi-Chih Liao,
Hao Xu,
M. Feng
Publication year - 2013
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4816966
Subject(s) - heterojunction , bipolar junction transistor , microwave , optoelectronics , materials science , hot electron , heterojunction bipolar transistor , electron , transistor , condensed matter physics , physics , voltage , quantum mechanics
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