Empirical determination of the energy band gap narrowing in highly doped n+ silicon | Zendy

Di Yan | Zendy; Andrés Cuevas | Zendy

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Empirical determination of the energy band gap narrowing in highly doped n+ silicon

Author(s) -

Di Yan,

Andrés Cuevas

Publication year - 2013

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.4816694

Subject(s) - dopant , silicon , doping , band gap , diffusion , range (aeronautics) , condensed matter physics , materials science , fermi level , boltzmann constant , fermi energy , molecular physics , chemistry , physics , optoelectronics , thermodynamics , electron , quantum mechanics , composite material

Highly doped regions in silicon devices should be analyzed using Fermi-Dirac statistics, taking into account energy band gap narrowing (BGN). An empirical expression for the BGN as a function of dopant concentration is derived here by matching the modeled and measured thermal recombination current densities J0 of a broad range of n+ dopant concentration profiles prepared by phosphorus diffusion. The analysis is repeated with Boltzmann statistics in order to determine a second empirical expression for the apparent energy band gap narrowing, which is found to be in good agreement with previous work.

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