Open AccessOptical absorption by dilute GaNSb alloys: Influence of N pair states
Author(s) -
James J. Mudd,
Nicholas Kybert,
W. M. Linhart,
L. Buckle,
T. Ashley,
P. D. C. King,
T. S. Jones,
M. J. Ashwin,
T. D. Veal
Publication year - 2013
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4816519
Subject(s) - dispersion (optics) , absorption (acoustics) , conduction band , absorption spectroscopy , condensed matter physics , materials science , infrared spectroscopy , spectroscopy , infrared , band gap , chemistry , optics , optoelectronics , physics , electron , organic chemistry , quantum mechanics , composite material
The optical properties of GaNSb alloys with N contents of up to 2.5% have been investigated at room temperature using infrared absorption spectroscopy. The evolution of the absorption onsets with N content has been described using a three level band anticrossing model of the N localized states interactions with the GaSb conduction band. This approach includes the effect of N pair states, which is critical to reproduce the observed optical properties. This confirms theoretical predictions that N pair states have a more pronounced effect on the band dispersion in GaNSb than in GaNAs.
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