High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric | Zendy

Pradipta K. Nayak | Zendy; Mohamed Nejib Hedhili | Zendy; Dongkyu Cha | Zendy; Husam N. Alshareef | Zendy

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High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

Author(s) -

Pradipta K. Nayak,

Mohamed Nejib Hedhili,

Dongkyu Cha,

Husam N. Alshareef

Publication year - 2013

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4816060

Subject(s) - materials science , oxide , indium , dielectric , thin film transistor , doping , thin film , equivalent oxide thickness , aluminium , aluminum oxide , electron mobility , annealing (glass) , layer (electronics) , chemical engineering , transistor , field effect transistor , inorganic chemistry , optoelectronics , nanotechnology , gate oxide , composite material , metallurgy , chemistry , electrical engineering , engineering , voltage

We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance

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