Heteroepitaxial Ge-on-Si by DC magnetron sputtering | Zendy

Martin Steglich | Zendy; Christian Patzig | Zendy; Lutz Berthold | Zendy; Frank Schrempel | Zendy; Kevin Füchsel | Zendy; Thomas Höche | Zendy; ErnstBernhard Kley | Zendy; Andreas Tünnermann | Zendy

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Heteroepitaxial Ge-on-Si by DC magnetron sputtering

Author(s) -

Martin Steglich,

Christian Patzig,

Lutz Berthold,

Frank Schrempel,

Kevin Füchsel,

Thomas Höche,

ErnstBernhard Kley,

Andreas Tünnermann

Publication year - 2013

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4813841

Subject(s) - materials science , sputter deposition , sputtering , amorphous solid , transmission electron microscopy , epitaxy , ellipsometry , analytical chemistry (journal) , dislocation , doping , thin film , optoelectronics , crystallography , layer (electronics) , nanotechnology , chemistry , composite material , chromatography

The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed

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