Dielectric environment effect on carrier mobility of graphene double-layer structure
Author(s) -
Kazuhiro Hosono,
Katsunori Wakabayashi
Publication year - 2013
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4813821
Subject(s) - graphene , dielectric , electron mobility , condensed matter physics , materials science , impurity , fermi level , layer (electronics) , chemical physics , nanotechnology , optoelectronics , chemistry , physics , electron , organic chemistry , quantum mechanics
We have theoretically studied the dielectric environment effect on the charged-impurity-limited carrier mobility of graphene double-layer structure (GDLS) on the basis of the Boltzmann transport theory. In this system, two graphene layers are separated by a dielectric barrier layer. It is pointed out that the carrier mobility strongly depends on the dielectric constant of the barrier layer when the interlayer distance becomes larger than the inverse of the Fermi wave vector. Moreover, the conditions to improve the charged-impurity-limited carrier mobility of the GDLS are evaluated.
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