Scaling size of the interplay between quantum confinement and surface related effects in nanostructured silicon
Author(s) -
Gabriele Seguini,
Célia Castro,
Sylvie SchammChardon,
G. Benassayag,
P. Pellegrino,
Michele Perego
Publication year - 2013
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4813743
Subject(s) - quantum dot , nanoscopic scale , scaling , nanocrystal , condensed matter physics , materials science , silicon , conduction band , thermal conduction , potential well , nanotechnology , valence (chemistry) , quantum , chemical physics , optoelectronics , physics , quantum mechanics , electron , geometry , mathematics , composite material
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