Millimeter-wave photoresponse due to excitation of two-dimensional plasmons in InGaAs/InP high-electron-mobility transistors | Zendy

Nima Nader Esfahani | Zendy; Robert E. Peale | Zendy; Walter R. Buchwald | Zendy; C. J. Fredricksen | Zendy; Joshua R. Hendrickson | Zendy; Justin W. Cleary | Zendy

Open Access

Millimeter-wave photoresponse due to excitation of two-dimensional plasmons in InGaAs/InP high-electron-mobility transistors

Author(s) -

Nima Nader Esfahani,

Robert E. Peale,

Walter R. Buchwald,

C. J. Fredricksen,

Joshua R. Hendrickson,

Justin W. Cleary

Publication year - 2013

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.4813511

Subject(s) - high electron mobility transistor , optoelectronics , plasmon , materials science , transistor , grating , extremely high frequency , electron mobility , heterojunction , induced high electron mobility transistor , absorption (acoustics) , electron , surface plasmon resonance , gallium arsenide , indium gallium arsenide , optics , physics , nanotechnology , quantum mechanics , voltage , composite material , nanoparticle

A polarized photoresponse to mm-wave radiation over the frequency range of 40 to 108 GHz is demonstrated in a grating-gated high electron mobility transistor (HEMT) formed by an InGaAs/InP heterostructure. The photoresponse is observed within the plasmon resonance absorption band of the HEMT, whose gate consists of a 9 μm period grating that couples incident radiation to plasmons in the 2D electron gas. Gate-bias changes the channel carrier concentration, causing a corresponding change in photoresponse in agreement with theoretical expectations for the shift in the plasmon resonance band. The noise equivalent power is estimated to be 235 pW/Hz1/2.

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