Open AccessCharacterization of GaN microstructures grown by plasma-assisted molecular beam epitaxy
Author(s) -
Ikai Lo,
Wen-Yuan Pang,
Wen-Yen Chen,
Yu-Chi Hsu,
Chia-Ho Hsieh,
Cheng-Hung Shih,
Mitch M. C. Chou,
Tzu-Min Hsu,
Gary Z. L. Hsu
Publication year - 2013
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4812871
Subject(s) - cathodoluminescence , molecular beam epitaxy , materials science , wurtzite crystal structure , optoelectronics , photoluminescence , microstructure , characterization (materials science) , wide bandgap semiconductor , epitaxy , plasma , nanotechnology , layer (electronics) , luminescence , composite material , metallurgy , physics , quantum mechanics , zinc
The characterization of GaN microstructures grown by plasma-assisted molecular beam epitaxy on LiAlO2 substrate was studied by cathodoluminescence and photoluminescence measurements. We demonstrated that the cathodoluminescence from oblique semi-polar surfaces of mushroom-shaped GaN was much brighter than that from top polar surface due to the reduction of polarization field on the oblique semi-polar surfaces. It implies that the oblique semi-polar surface is superior for the light-emitting surface of wurtzite nano-devices
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