Open AccessUltraviolet laser diodes grown on semipolar (202¯1) GaN substrates by plasma-assisted molecular beam epitaxy
Author(s) -
Marta Sawicka,
G. Muzioł,
Henryk Turski,
Szymon Grzanka,
Ewa Grzanka,
Julita SmalcKoziorowska,
J.L. Weyher,
Caroline Chèze,
M. Albrecht,
Robert Kucharski,
P. Perlin,
C. Skierbiszewski
Publication year - 2013
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4812201
Subject(s) - molecular beam epitaxy , materials science , optoelectronics , diode , laser , heterojunction , ultraviolet , transmission electron microscopy , plasma , wide bandgap semiconductor , epitaxy , optics , nanotechnology , layer (electronics) , physics , quantum mechanics
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom