Open AccessElectrical characterization of In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate under mechanical bending conditions
Author(s) -
Jie Shi,
Nicolas Wichmann,
Yannick Roelens,
S. Bollaert
Publication year - 2013
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4811787
Subject(s) - materials science , high electron mobility transistor , substrate (aquarium) , bending , transistor , optoelectronics , electron mobility , epitaxy , composite material , gallium arsenide , layer (electronics) , induced high electron mobility transistor , electrical engineering , engineering , oceanography , voltage , geology
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