Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser | Zendy

Peter Ludewig | Zendy; Nikolai Knaub | Zendy; N. Hossain | Zendy; S. Reinhard | Zendy; L. Nattermann | Zendy; Igor P. Marko | Zendy; S. R. Jin | Zendy; K. Hild | Zendy; Sangam Chatterjee | Zendy; W. Stolz | Zendy; Stephen J. Sweeney | Zendy; Kerstin Volz | Zendy

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Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser

Author(s) -

Peter Ludewig,

Nikolai Knaub,

N. Hossain,

S. Reinhard,

L. Nattermann,

Igor P. Marko,

S. R. Jin,

K. Hild,

Sangam Chatterjee,

W. Stolz,

Stephen J. Sweeney,

Kerstin Volz

Publication year - 2013

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4811736

Subject(s) - optoelectronics , materials science , lasing threshold , laser , quantum well , diode , semiconductor laser theory , gain switching , wavelength , infrared , epitaxy , optics , nanotechnology , layer (electronics) , physics

The Ga(AsBi) material system opens opportunities in the field of high efficiency infrared laser diodes. We report on the growth, structural investigations, and lasing properties of dilute bismide Ga(AsBi)/(AlGa)As single quantum well lasers with 2.2% Bi grown by metal organic vapor phase epitaxy on GaAs (001) substrates. Electrically injected laser operation at room temperature is achieved with a threshold current density of 1.56 kA/cm2 at an emission wavelength of ∼947 nm. These results from broad area devices show great promise for developing efficient IR laser diodes based on this emerging materials system.

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