Open AccessErratum “Impact of isovalent doping on the trapping of vacancy and interstitial related defects in Si” [J. Appl. Phys. 113, 113506 (2013)]
Author(s) -
E. N. Sgourou,
Dilyara Timerkaeva,
C. A. Londos,
D. Aliprantis,
A. Chroneos,
Damien Caliste,
Pascal Pochet
Publication year - 2013
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4811367
Subject(s) - vacancy defect , trapping , doping , materials science , silicon , condensed matter physics , atomic physics , physics , optoelectronics , ecology , biology
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