Temperature-dependent exciton-related transition energies mediated by carrier concentrations in unintentionally Al-doped ZnO films | Zendy

Kun Tang | Zendy; Shulin Gu | Zendy; Jiandong Ye | Zendy; Shimin Huang | Zendy; R. Y. Gu | Zendy; Shunming Zhu | Zendy; Rong Zhang | Zendy; Yi Shi | Zendy; Youdou Zheng | Zendy

Open Access

Temperature-dependent exciton-related transition energies mediated by carrier concentrations in unintentionally Al-doped ZnO films

Author(s) -

Kun Tang,

Shulin Gu,

Jiandong Ye,

Shimin Huang,

R. Y. Gu,

Shunming Zhu,

Rong Zhang,

Yi Shi,

Youdou Zheng

Publication year - 2013

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4809669

Subject(s) - exciton , photoluminescence , doping , free carrier , materials science , condensed matter physics , band gap , hall effect , wide bandgap semiconductor , renormalization , binding energy , optoelectronics , electrical resistivity and conductivity , atomic physics , physics , quantum mechanics

The authors reported on a carrier-concentration mediation of exciton-related radiative transition energies in Al-doped ZnO films utilizing temperature-dependent (TD) photoluminescence and TD Hall-effect characterizations. The transition energies of free and donor bound excitons consistently change with the measured TD carrier concentrations. Such a carrier-concentration mediation effect can be well described from the view of heavy-doping-induced free-carrier screening and band gap renormalization effects. This study gives an important development to the currently known optical properties of ZnO materials.

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