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Lattice mismatch accommodation via oxygen vacancy ordering in epitaxial La0.5Sr0.5CoO3-δ thin films
Author(s) -
Jaume Gázquez,
Shameek Bose,
Manish Sharma,
M. A. Torija,
Stephen J. Pennycook,
C. Leighton,
M. Varela
Publication year - 2013
Publication title -
apl materials
Language(s) - English
Resource type - Journals
ISSN - 2166-532X
DOI - 10.1063/1.4809547
Subject(s) - materials science , epitaxy , vacancy defect , condensed matter physics , transmission electron microscopy , crystallography , diffraction , thin film , lattice (music) , scanning transmission electron microscopy , lattice constant , optics , nanotechnology , chemistry , physics , layer (electronics) , acoustics
The properties of complex oxide films depend sensitively on epitaxial strain. This strain affects bond lengths and angles, and defect types and densities, thus impacting physical properties. In this work we perform detailed characterization of depth-dependent strain in epitaxial La0.5Sr0.5CoO3-δ (LSCO) films on SrTiO3(001), SrTiO3(110), and LaAlO3(001) substrates, combining high resolution x-ray diffraction and scanning transmission electron microscopy, in addition to geometric phase analysis. We elucidate a fundamental link between strain state and O vacancy ordering in LSCO films, where lattice mismatch and crystallographic orientation can be used to manipulate the modulation vector of the long-range vacancy order, thus providing a new approach to tailor the properties of such films

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