Enhancement of p-type mobility in tin monoxide by native defects | Zendy

D. B. Granato | Zendy; J. A. Caraveo-Frescas | Zendy; Husam N. Alshareef | Zendy; Udo Schwingenschlögl | Zendy

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Enhancement of p-type mobility in tin monoxide by native defects

Author(s) -

D. B. Granato,

J. A. Caraveo-Frescas,

Husam N. Alshareef,

Udo Schwingenschlögl

Publication year - 2013

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4808382

Subject(s) - delocalized electron , monoxide , valence (chemistry) , atomic orbital , tin , materials science , valence band , chemical physics , semiconductor , electron mobility , electronic structure , condensed matter physics , optoelectronics , nanotechnology , crystallography , band gap , chemistry , computational chemistry , physics , metallurgy , electron , organic chemistry , quantum mechanics

Transparent p-type materials with good mobility are needed to build completely transparent p-n junctions. Tin monoxide (SnO) is a promising candidate. A recent study indicates great enhancement of the hole mobility of SnO grown in Sn-rich environment [E. Fortunato et al., Appl. Phys. Lett. 97, 052105 (2010)]. Because such an environment makes the formation of defects very likely, we study defect effects on the electronic structure to explain the increased mobility. We find that Sn interstitials and O vacancies modify the valence band, inducing higher contributions of the delocalized Sn 5p orbitals as compared to the localized O 2p orbitals, thus increasing the mobility. This mechanism of valence band modification paves the way to a systematic improvement of transparent p-type semiconductors

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