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Room temperature multiferroicity in Ga0.6Fe1.4O3:Mg thin films
Author(s) -
Alexandre Thomasson,
S. Cherifi,
Christophe Lefèvre,
F. Roulland,
Brice Gautier,
David F. Albertini,
C. Mény,
N. Viart
Publication year - 2013
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4808349
Subject(s) - multiferroics , materials science , ferroelectricity , thin film , coercivity , pulsed laser deposition , yttrium , polarization (electrochemistry) , magnetization , yttrium iron garnet , curie temperature , condensed matter physics , nuclear magnetic resonance , optoelectronics , analytical chemistry (journal) , dielectric , magnetic field , ferromagnetism , nanotechnology , metallurgy , chemistry , physics , quantum mechanics , chromatography , oxide
We report on the multiferroic behavior of 2%-magnesium-doped Ga0.6Fe1.4O3 thin film at room temperature. The sample was grown by pulsed laser deposition on a Pt-coated Yttrium-Stabilized Zirconia substrate. Magnetic measurements indicate a net magnetization of 105 emu/cm3 at 295 K, and the persistence of magnetic ordering above room temperature. Ferroelectric measurements show clear polarization switching with negligible contribution from leakage currents, with a polarization of 0.2 μC/cm−2 and a coercive field of 133 kV/cm. Scanning probe microscopy confirms the low leakage current and detects a stable piezoelectric signal. This could open original perspectives for the application of single-phased multiferroic systems.

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