Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on silicon | Zendy

A. Talneau | Zendy; Christophe Roblin | Zendy; A. Itawi | Zendy; O. Mauguin | Zendy; L. Largeau | Zendy; G. Beaudouin | Zendy; I. Sagnes | Zendy; G. Patriarche | Zendy; Chengxin Pang | Zendy; H. Benisty | Zendy

Open Access

Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on silicon

Author(s) -

A. Talneau,

Christophe Roblin,

A. Itawi,

O. Mauguin,

L. Largeau,

G. Beaudouin,

I. Sagnes,

G. Patriarche,

Chengxin Pang,

H. Benisty

Publication year - 2013

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4807890

Subject(s) - materials science , oxide , optoelectronics , quantum well , silicon , wire bonding , epitaxy , luminescence , direct bonding , plane (geometry) , optics , nanotechnology , metallurgy , layer (electronics) , laser , electrical engineering , chip , physics , geometry , mathematics , engineering

International audienceAn oxide-free heteroepitaxial bonding of InP-clad GaInAs quantum wells on Si showing an atomicplane-thick reconstruction across the InP-Si interface and no degradation of the quantum wellsluminescence is demonstrated. Several InP surface preparation procedures have been investigated toensure an oxide-free bonding. Such a bonding procedure without oxide or metal mediation allowsembedding very-high-index-contrast nanostructuration within optic and optoelectronic integrateddevices, thus enabling tailored designs enhancing dedicated optical functions. Heteroepitaxialbonding is also similarly obtained on nanopatterned Si surface.V

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