Kelvin force microscopy characterization of charging effect in thin a-SiOxNy:H layers deposited in pulsed plasma enhanced chemical vapor deposition process by tuning the Silicon-environment | Zendy

Christina Villeneuve-Faure | Zendy; Kremena Makasheva | Zendy; Caroline Bonafos | Zendy; Bernard Despax | Zendy; Laurent Boudou | Zendy; P. Pons | Zendy; G. Teyssèdre | Zendy

Open Access

Kelvin force microscopy characterization of charging effect in thin a-SiOxNy:H layers deposited in pulsed plasma enhanced chemical vapor deposition process by tuning the Silicon-environment

Author(s) -

Christina Villeneuve-Faure,

Kremena Makasheva,

Caroline Bonafos,

Bernard Despax,

Laurent Boudou,

P. Pons,

G. Teyssèdre

Publication year - 2013

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.4805026

Subject(s) - kelvin probe force microscope , materials science , characterization (materials science) , thin film , dielectric , ellipsometry , chemical vapor deposition , optoelectronics , plasma enhanced chemical vapor deposition , analytical chemistry (journal) , thin layers , deposition (geology) , silicon oxynitride , thermal conduction , plasma , layer (electronics) , silicon , silicon nitride , nanotechnology , composite material , chemistry , atomic force microscopy , paleontology , chromatography , sediment , biology , physics , quantum mechanics

Results from a study on the charging effect of a-SiOxNy:H thin layers are presented in this paper. Issues related to structural and electrical characterization of these layers are discussed. Spectroscopic ellipsometry was used to determine accurately the layer thickness and their optical properties, while the Kelvin Force Microscopy (KFM) was applied to characterize the local electrical properties of the layers. Obtained results reveal that by tuning the Si-environment in a-SiOxNy:H thin dielectric layers, deposited in plasma assisted process, a strong modification of the surface and volume charge conduction can be achieved. Particularly, increasing Si-content in the a-SiOxNy:H layers rises the volume conduction and charges retention. Thus, local electrical properties of thin dielectric layers can be engineered in order to meet specific requirements.

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