Temperature dependence of the average electron-hole pair creation energy in Al0.8Ga0.2As | Zendy

A.M. Barnett | Zendy; J.E. Lees | Zendy; D J Bassford | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Temperature dependence of the average electron-hole pair creation energy in Al0.8Ga0.2As

Author(s) -

A.M. Barnett,

J.E. Lees,

D J Bassford

Publication year - 2013

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4804989

Subject(s) - photodiode , preamplifier , diode , electron , photon energy , atmospheric temperature range , semiconductor , materials science , atomic physics , band gap , physics , optoelectronics , photon , optics , thermodynamics , nuclear physics , amplifier , cmos

The temperature dependence of the average energy consumed in the creation of an electron-hole pair in the wide bandgap compound semiconductor Al[subscript 0.8]Ga[subscript 0.2]As is reported following X-ray measurements made using an Al[subscript 0.8]Ga[subscript 0.2]As photodiode diode coupled to a low-noise charge-sensitive preamplifier operating in spectroscopic photon counting mode. The temperature dependence is reported over the range of 261 K–342K and is found to be best represented by the equation ε[subscript AlGaAs]=7.327–0.0077 T, where ε[subscript AlGaAs] is the average electron-hole pair creation energy in eV and T is the temperature in K.The authors acknowledge financial support received in the form of UK Science and Technology Facilities Council grants ST/H000143/1 and ST/K00025X/1 which supported this work.Peer-reviewedPublisher Versio

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research