Organic nonvolatile resistive memory devices based on thermally deposited Au nanoparticle | Zendy

Zhiwen Jin | Zendy; Guo Liu | Zendy; Jizheng Wang | Zendy

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Organic nonvolatile resistive memory devices based on thermally deposited Au nanoparticle

Author(s) -

Zhiwen Jin,

Guo Liu,

Jizheng Wang

Publication year - 2013

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4804948

Subject(s) - materials science , resistive random access memory , electrode , nanoparticle , polyimide , resistive touchscreen , polymer , non volatile memory , thin film , optoelectronics , thermal conduction , electron , nanotechnology , organic semiconductor , composite material , chemistry , layer (electronics) , electrical engineering , physics , engineering , quantum mechanics

Uniform Au nanoparticles (NPs) are formed by thermally depositing nominal 2-nm thick Au film on a 10-nm thick polyimide film formed on a Al electrode, and then covered by a thin polymer semiconductor film, which acts as an energy barrier for electrons to be injected from the other Al electrode (on top of polymer film) into the Au NPs, which are energetically electron traps in such a resistive random access memory (RRAM) device. The Au NPs based RRAM device exhibits estimated retention time of 104 s, cycle times of more than 100, and ON-OFF ratio of 102 to 103. The carrier transport properties are also analyzed by fitting the measured I-V curves with several conduction models

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