Open AccessEmergence of very broad infrared absorption band by hyperdoping of silicon with chalcogens
Author(s) -
Ikurou Umezu,
Jeffrey M. Warrender,
Supakit Charnvanichborikarn,
Atsushi Kohno,
J. S. Williams,
M. Tabbal,
D. G. Papazoglou,
X.-C. Zhang,
Michael J. Aziz
Publication year - 2013
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4804935
Subject(s) - chalcogen , silicon , tellurium , infrared , annealing (glass) , impurity , metastability , semimetal , absorption (acoustics) , infrared spectroscopy , materials science , monocrystalline silicon , absorption spectroscopy , absorption band , chemistry , analytical chemistry (journal) , optoelectronics , crystallography , inorganic chemistry , optics , metallurgy , physics , organic chemistry , chromatography , composite material
We report the near through mid-infrared (MIR) optical absorption spectra, over the range 0.05–1.3 eV, of monocrystalline silicon layers hyperdoped with chalcogen atoms synthesized by ion implantation followed by pulsed laser melting. A broad mid-infrared optical absorption band emerges, peaking near 0.5 eV for sulfur and selenium and 0.3 eV for tellurium hyperdoped samples. Its strength and width increase with impurity concentration. Its strength decreases markedly with subsequent thermal annealing. The emergence of a broad MIR absorption band is consistent with the formation of an impurity band from isolated deep donor levels as the concentration of chalcogen atoms in metastable local configurations increases.
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