Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure | Zendy

JrTai Chen | Zendy; Urban Forsberg | Zendy; Erik Janzén | Zendy

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Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure

Author(s) -

JrTai Chen,

Urban Forsberg,

Erik Janzén

Publication year - 2013

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4804600

Subject(s) - chemical vapor deposition , heterojunction , materials science , carbon fibers , electron mobility , doping , metalorganic vapour phase epitaxy , substrate (aquarium) , wide bandgap semiconductor , optoelectronics , layer (electronics) , analytical chemistry (journal) , chemistry , nanotechnology , epitaxy , composite material , composite number , oceanography , chromatography , geology

High tuneability of residual carbon doping is developed in a hot-wall metalorganic chemical vapor deposition reactor. Two orders of temperature-tuned carbon concentration, from ∼2 × 1018 cm−3 down to ∼1 × 1016 cm−3, can be effectively controlled in the growth of the GaN buffer layer. Excellent uniformity of two-dimensional electron gas (2DEG) properties in AlxGa1−xN/AlN/GaN heterostructure with very high average carrier density and mobility, 1.1 × 1013 cm−2 and 2035 cm2/V·s, respectively, over 3" semi-insulating SiC substrate is realized with the temperature-tuned carbon doping scheme. Reduction of carbon concentration is evidenced as a key to achieve high 2DEG carrier density and mobility

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