Open AccessErratum: “X-ray reciprocal space mapping of dislocation-mediated strain relaxation during InGaAs/GaAs(001) epitaxial growth” [J. Appl. Phys. 110, 113502 (2011)]
Author(s) -
Takuo Sasaki,
Hidetoshi Suzuki,
Masamitu Takahasi,
Yoshio Ohshita,
Itaru Kamiya,
Masafumi Yamaguchi
Publication year - 2013
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4804236
Subject(s) - reciprocal lattice , condensed matter physics , dislocation , epitaxy , materials science , strain (injury) , crystallography , relaxation (psychology) , x ray , chemistry , physics , nanotechnology , optics , biology , diffraction , layer (electronics) , neuroscience , anatomy
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