Open Accessp-channel thin-film transistors based on spray-coated Cu2O films
Author(s) -
Pichaya Pattanasattayavong,
Stuart Thomas,
George Adamopoulos,
Martyn A. McLachlan,
Thomas D. Anthopoulos
Publication year - 2013
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4803085
Subject(s) - materials science , thin film transistor , thin film , optoelectronics , dielectric , band gap , transistor , field effect transistor , oxide , electrode , gate dielectric , analytical chemistry (journal) , nanotechnology , layer (electronics) , electrical engineering , metallurgy , chemistry , engineering , voltage , chromatography
Thin films of cuprous oxide (Cu2O) were grown using solution-based spray pyrolysis in ambient air and incorporated into hole-transporting thin-film transistors. The phase of the oxide was confirmed by X-ray diffraction measurements while the optical band gap of the films was determined to be ∼2.57 eV from optical transmission measurements. Electrical characterization of Cu2O films was performed using bottom-gate, bottom-contact transistors based on SiO2 gate dielectric and gold source-drain electrodes. As-prepared devices show clear p-channel operation with field-effect hole mobilities in the range of 10−4–10−3 cm2 V−1 s−1 with some devices exhibiting values close to 1 × 10−2 cm2 V−1 s−1
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