Open AccessResponse to “Comment on ‘A model for internal photoemission at high-k oxide/silicon energy barriers’” [J. Appl. Phys. 113, 166101 (2013)]
Author(s) -
Olof Engström
Publication year - 2013
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4802675
Subject(s) - silicon , oxide , energy (signal processing) , materials science , condensed matter physics , internal energy , physics , engineering physics , thermodynamics , optoelectronics , quantum mechanics , metallurgy
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