Improved Si0.5Ge0.5/Si interface quality achieved by the process of low energy hydrogen plasma cleaning and investigation of interface quality with positron annihilation spectroscopy | Zendy

M.-H. Liao | Zendy; C.-H. Chen | Zendy

Open Access

Improved Si0.5Ge0.5/Si interface quality achieved by the process of low energy hydrogen plasma cleaning and investigation of interface quality with positron annihilation spectroscopy

Author(s) -

M.-H. Liao,

C.-H. Chen

Publication year - 2013

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4801933

Subject(s) - raman spectroscopy , materials science , annihilation , interface (matter) , positron annihilation spectroscopy , plasma , energy (signal processing) , spectral line , optoelectronics , quality (philosophy) , hydrogen , positron annihilation , positron , analytical chemistry (journal) , electron , chemistry , optics , composite material , nuclear physics , physics , capillary action , organic chemistry , capillary number , quantum mechanics , astronomy , chromatography

The Positron Annihilation Spectra (PAS), Raman, and Photoluminescence spectroscopy reveal that Si0.5Ge0.5/Si interface quality can be significantly improved by the low energy plasma cleaning process using hydrogen. In the PAS, the particularly small value of lifetime and intensity near the Si0.5Ge0.5/Si interface in the sample with the treatment indicate that the defect concentration is successfully reduced 2.25 times, respectively. Fewer defects existed in the Si0.5Ge0.5/Si interface result in the high compressive strain about 0.36% in the top epi-Si0.5Ge0.5 layer, which can be observed in Raman spectra and stronger radiative recombination rate about 1.39 times for the infrared emission, which can be observed in the photoluminescence spectra. With better Si0.5Ge0.5/Si interface quality, the SiGe-based devices can have better optical and electrical characteristics for more applications in the industry. The PAS is also demonstrated that it is the useful methodology tool to quantify the defect information in the SiGe-based material

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