Open AccessWavy channel transistor for area efficient high performance operation
Author(s) -
Hossain M. Fahad,
Aftab M. Hussain,
Galo Torres Sevilla,
Muhammad M. Hussain
Publication year - 2013
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4800234
Subject(s) - transistor , power consumption , channel (broadcasting) , latency (audio) , chip , electronic engineering , materials science , optoelectronics , power (physics) , computer science , electrical engineering , engineering , voltage , physics , quantum mechanics
We report a wavy channel FinFET like transistor where the channel is wavy to increase its width without any area penalty and thereby increasing its drive current. Through simulation and experiments, we show the effectiveness of such device architecture is capable of high performance operation compared to conventional FinFETs with comparatively higher area efficiency and lower chip latency as well as lower power consumption
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