In-situ heavily p-type doping of over 1020 cm−3 in semiconducting BaSi2 thin films for solar cells applications | Zendy

M. Ajmal Khan | Zendy; Kosuke O. Hara | Zendy; Weijie Du | Zendy; Masako Baba | Zendy; Kotaro Nakamura | Zendy; Mitsushi Suzuno | Zendy; Kaoru Toko | Zendy; Noritaka Usami | Zendy; Takashi Suemasu | Zendy

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In-situ heavily p-type doping of over 1020 cm−3 in semiconducting BaSi2 thin films for solar cells applications

Author(s) -

M. Ajmal Khan,

Kosuke O. Hara,

Weijie Du,

Masako Baba,

Kotaro Nakamura,

Mitsushi Suzuno,

Kaoru Toko,

Noritaka Usami,

Takashi Suemasu

Publication year - 2013

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4796142

Subject(s) - dopant activation , molecular beam epitaxy , doping , dopant , acceptor , annealing (glass) , materials science , atmospheric temperature range , thin film , analytical chemistry (journal) , solar cell , epitaxy , optoelectronics , layer (electronics) , chemistry , nanotechnology , metallurgy , condensed matter physics , physics , chromatography , meteorology

B-doped p-BaSi2 layer growth by molecular beam epitaxy and the influence of rapid thermal annealing (RTA) on hole concentrations were presented. The hole concentration was controlled in the range between 1017 and 1020 cm−3 at room temperature by changing the temperature of the B Knudsen cell crucible. The acceptor level of the B atoms was estimated to be approximately 23 meV. High hole concentrations exceeding 1 × 1020 cm−3 were achieved via dopant activation using RTA at 800 °C in Ar. The activation efficiency was increased up to 10%

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