z-logo
open-access-imgOpen Access
Low hysteresis and large room temperature magnetocaloric effect of Gd5Si2.05−xGe1.95−xNi2x (2x = 0.08, 0.1) alloys
Author(s) -
Xichun Zhong,
J.X. Min,
Liu Hon,
Z.G. Zheng,
Dechang Zeng,
V. Franco,
R.V. Ramanujan
Publication year - 2013
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4795434
Subject(s) - magnetic refrigeration , materials science , orthorhombic crystal system , arc melting , thermal hysteresis , alloy , magnetic hysteresis , annealing (glass) , condensed matter physics , monoclinic crystal system , hysteresis , phase transition , magnetization , crystallography , thermodynamics , crystal structure , magnetic field , metallurgy , chemistry , physics , quantum mechanics
Gd5Si2.05-xGe1.95-xNi2x (2x ¼ 0.08, 0.1) alloys were prepared by arc melting followed by annealing at 1273 K for 96 h. Mixed monoclinic Gd5Si2Ge2-type phase, orthorhombic Gd5Si4-type phase, and a small amount of Gd5Si3-type phase were obtained in these alloys. Gd5Si2.01Ge1.91Ni0.08 alloy undergoes a second-order transition (TC) around 300 K, whereas Gd5Si2Ge1.9Ni0.1 alloy exhibits two II I transitions including a first-order transition (TC ) at rv295 K and second-order transition (TC ) at rv301 K. Ni substitution can effectively reduce the thermal hysteresis and magnetic hysteresis while max maintaining large magnetic entropy change. The maximum magnetic entropy changes (|DSM |) of 1 -1 Gd5Si2.05-xGe1.95-xNi2x alloys with 2x ¼ 0.08 and 0.1 are 4.4 and 5.0 J kg-K, respectively, for 0–2 T, and are 8.0 and 9.1 J kg-1 K-1, respectively, for 0–5 T. Low hysteresis performance and relatively large magnetic entropy change make these alloys favorable for magnetic refrigeration applications

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom