Open AccessEffects of forming gas anneal on ultrathin InGaAs nanowire metal-oxide-semiconductor field-effect transistors
Author(s) -
Mengwei Si,
Jiangjiang Gu,
Xinwei Wang,
Jiayi Shao,
Xuefei Li,
Michael J. Manfra,
Roy G. Gordon,
Peide D. Ye
Publication year - 2013
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4794846
Subject(s) - materials science , nanowire , optoelectronics , forming gas , passivation , field effect transistor , subthreshold slope , semiconductor , mosfet , transistor , indium gallium arsenide , annealing (glass) , gallium arsenide , nanotechnology , electrical engineering , voltage , layer (electronics) , engineering , composite material
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