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Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes
Author(s) -
Richard P. Green,
Jonathan J. D. McKendry,
D. Massoubre,
Erdan Gu,
Martin D. Dawson,
Anthony E. Kelly
Publication year - 2013
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4794078
Subject(s) - auger effect , optoelectronics , light emitting diode , quantum well , auger , diode , wavelength , spontaneous emission , materials science , modulation (music) , quantum efficiency , carrier generation and recombination , bandwidth (computing) , physics , optics , atomic physics , semiconductor , telecommunications , laser , computer science , acoustics
We report modulation bandwidth measurements on a number of InGaN-based quantum well LEDs emitting at 450 and 520nm wavelengths. It is shown that for these devices the data can be interpreted in terms of Auger recombination, by taking account of the carrier density dependence of the radiative coefficient. We find values for the Auger coefficient of (1±0.3)×10-29 cm6s-1 at 450nm and (3±1)×10-30 cm6s-1 at 520nm

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