Open AccessUltra-thin filaments revealed by the dielectric response across the metal-insulator transition in VO2
Author(s) -
Juan Gabriel Ramírez,
Rainer Schmidt,
Amos Sharoni,
M. E. Gómez,
Iván K. Schuller,
Edgar J. Patiño
Publication year - 2013
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4792052
Subject(s) - dielectric , capacitor , materials science , dielectric spectroscopy , thin film , resistor , condensed matter physics , metal–insulator transition , capacitive sensing , resistive touchscreen , phase transition , insulator (electricity) , electrical impedance , relaxation (psychology) , capacitance , optoelectronics , metal , electrical engineering , nanotechnology , voltage , chemistry , electrode , physics , social psychology , psychology , electrochemistry , metallurgy , engineering
Temperature dependent dielectric spectroscopy measurements on vanadium dioxide thin films allow us to distinguish between the resistive, capacitive, and inductive contributions to the impedance across the metal-insulator transition (MIT). We developed a single, universal, equivalent circuit model to describe the dielectric behavior above and below the MIT. Our model takes account of phase-coexistence of metallic and insulating regions. We find evidence for the existence at low temperature of ultra-thin threads as described by a resistor-inductor element. A conventional resistorcapacitor element connected in parallel accounts for the insulating phase and the dielectric relaxation
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