800 meV localization energy in GaSb/GaAs/Al0.3Ga0.7As quantum dots
Author(s) -
Tobias Nowozin,
Leo Bonato,
A. Högner,
Alissa Wiengarten,
D. Bimberg,
Wei-Hsun Lin,
ShihYen Lin,
Charles J. Reyner,
Baolai Liang,
Diana L. Huffaker
Publication year - 2013
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4791678
Subject(s) - quantum dot , extrapolation , materials science , gallium arsenide , deep level transient spectroscopy , spectroscopy , energy (signal processing) , optoelectronics , condensed matter physics , molecular physics , atomic physics , physics , silicon , mathematical analysis , mathematics , quantum mechanics
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