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The role of oxide interlayers in back reflector configurations for amorphous silicon solar cells
Author(s) -
Valeria Demontis,
Carla Sanna,
Jimmy Melskens,
Rudi Santbergen,
Arno H. M. Smets,
Alfonso Damiano,
Miro Zeman
Publication year - 2013
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4790875
Subject(s) - materials science , silicon , aluminium , oxide , amorphous silicon , zinc , chemical vapor deposition , thin film , silicon oxide , amorphous solid , aluminium oxide , optoelectronics , nanotechnology , crystalline silicon , metallurgy , chemistry , crystallography , silicon nitride
Thin oxide interlayers are commonly added to the back reflector of thin-film silicon solar cells to increase their current. To gain more insight in the enhancement mechanism, we tested different back reflector designs consisting of aluminium-doped zinc oxide (ZnO:Al) and/or hydrogenated silicon oxide (SiOx:H) interlayers with different metals (silver, aluminium, and chromium) in standard p-i-n a-Si:H solar cells. We use a unique inverse modeling approach to show that in most back reflectors the internal metal reflectance is lower than expected theoretically. However, the metal reflectance is increased by the addition of an oxide interlayer. Our experiments demonstrate that SiOx:H forms an interesting alternative interlayer because unlike the more commonly used ZnO:Al it can be deposited by plasma-enhanced chemical vapour deposition and it does not reduce the fill factor. The largest efficiency enhancement is obtained with a double interlayer of SiOx:H and ZnO:Al.Electrical Sustainable EnergyElectrical Engineering, Mathematics and Computer Scienc

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