Axial strain in GaAs/InAs core-shell nanowires | Zendy

Andreas Biermanns | Zendy; Torsten Rieger | Zendy; Genziana Bussone | Zendy; U. Pietsch | Zendy; Detlev Grützmacher | Zendy; Mihail Ion Lepsa | Zendy

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Axial strain in GaAs/InAs core-shell nanowires

Author(s) -

Andreas Biermanns,

Torsten Rieger,

Genziana Bussone,

U. Pietsch,

Detlev Grützmacher,

Mihail Ion Lepsa

Publication year - 2013

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4790185

Subject(s) - materials science , heterojunction , nanowire , molecular beam epitaxy , shell (structure) , core (optical fiber) , condensed matter physics , strain (injury) , relaxation (psychology) , epitaxy , gallium arsenide , ultimate tensile strength , dislocation , composite material , nanotechnology , optoelectronics , physics , medicine , psychology , social psychology , layer (electronics)

We study the axial strain relaxation in GaAs/InAs core-shell nanowire heterostructures grown by molecular beam epitaxy. Besides a gradual strain relaxation of the shell material, we find a significant strain in the GaAs core, increasing with shell thickness. This strain is explained by a saturation of the dislocation density at the core-shell interface. Independent measurements of core and shell lattice parameters by x-ray diffraction reveal a relaxation of 93% in a 35 nm thick InAs shell surrounding cores of 80 nm diameter. The compressive strain of −0.5% compared to bulk InAs is accompanied by a tensile strain up to 0.9% in the GaAs core.

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