Open AccessEnhancing the efficiency of SnS solar cells via band-offset engineering with a zinc oxysulfide buffer layer
Author(s) -
Prasert Sinsermsuksakul,
Katy Hartman,
Sang Bok Kim,
Jaeyeong Heo,
Leizhi Sun,
Helen Hejin Park,
Rupak Chakraborty,
Tonio Buonassisi,
Roy G. Gordon
Publication year - 2013
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4789855
Subject(s) - energy conversion efficiency , materials science , solar cell , zinc , zinc sulfide , short circuit , optoelectronics , open circuit voltage , tin , current density , thin film , zinc compounds , analytical chemistry (journal) , chemistry , voltage , metallurgy , nanotechnology , electrical engineering , physics , chromatography , quantum mechanics , engineering
SnS is a promising earth-abundant material for photovoltaic applications. Heterojuction solar cells were made by vapor deposition of p-type tin(II) sulfide, SnS, and n-type zinc oxysulfide, Zn(O,S), using a device structure of soda-lime glass/Mo/SnS/Zn(O,S)/ZnO/ITO. A record efficiency was achieved for SnS-based thin-film solar cells by varying the oxygen-to-sulfur ratio in Zn(O,S). Increasing the sulfur content in Zn(O,S) raises the conduction band offset between Zn(O,S) and SnS to an optimum slightly positive value. A record SnS/Zn(O,S) solar cell with a S/Zn ratio of 0.37 exhibits short circuit current density (Jsc), open circuit voltage (Voc), and fill factor (FF) of 19.4 mA/cm2, 0.244 V, and 42.97%, respectively, as well as an NREL-certified total-area power-conversion efficiency of 2.04% and an uncertified active-area efficiency of 2.46%.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom