Open AccessFast and low-temperature reduction of graphene oxide films using ammonia plasma
Author(s) -
Maeng Jun Kim,
Yonkil Jeong,
Sangho Sohn,
Sung-Youp Lee,
Jin Hyoung Kim,
Kwanghee Lee,
Yung Ho Kahng,
JaeHyung Jang
Publication year - 2013
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4789545
Subject(s) - graphene , raman spectroscopy , x ray photoelectron spectroscopy , oxide , materials science , ammonia , electrical resistivity and conductivity , nitrogen , doping , chemical engineering , plasma , graphene oxide paper , conductivity , analytical chemistry (journal) , oxygen , inorganic chemistry , nanotechnology , chemistry , optoelectronics , metallurgy , optics , environmental chemistry , organic chemistry , physics , electrical engineering , engineering , quantum mechanics
Reduced graphene oxide (rGO) has been produced using an ammonia (NH3) plasma reduction method. Simultaneous nitrogen doping during the reduction process enabled a rapid and low-temperature restoration of the electrical properties of the rGO. The chemical, structural, and electrical properties of the rGO films were analyzed using x-ray photoelectron spectroscopy, Raman spectroscopy, atomic force microscopy, and conductivity measurements. The oxygen functional groups were efficiently removed, and simultaneous nitrogen doping (6%) was carried out. In addition, the surface of the rGO film was flattened. Consequently, the rGO films exhibited electrical properties comparable to those prepared via other reduction methods
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