Piezoresistance of nano-scale silicon up to 2 GPa in tension | Zendy

Umesh Kumar Bhaskar | Zendy; Thomas Pardoen | Zendy; Vikram Passi | Zendy; JeanPierre Raskin | Zendy

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Piezoresistance of nano-scale silicon up to 2 GPa in tension

Author(s) -

Umesh Kumar Bhaskar,

Thomas Pardoen,

Vikram Passi,

JeanPierre Raskin

Publication year - 2013

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4788919

Subject(s) - materials science , uniaxial tension , silicon , dopant , composite material , nano , tension (geology) , nanoscopic scale , doping , ultimate tensile strength , saturation (graph theory) , stress (linguistics) , metallurgy , nanotechnology , optoelectronics , linguistics , philosophy , mathematics , combinatorics

The piezo-resistance of 100 nm-thick, [110] oriented, p-type, mono-crystalline Si beams has been investigated under large uniaxial tension up to 2 GPa using an original on-chip tensile testing set-up. The piezo-resistance coefficient (π) was found to increase by a factor of 6 compared with ∼1.5 for Si bulk, when decreasing the dopant concentration from Na ∼ 1 × 1019 cm−3 down to Na ∼ 5 × 1017 cm−3. Reduction of resistance by a factor of 5.8, higher than theoretical maximum of 4.5, is reported for Na ∼ 5 × 1017 cm−3 under a stress of 1.7 GPa, without any sign of saturation.

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